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Proceedings Paper

High-power and wide wavelength range GaN-based laser diodes
Author(s): Tokuya Kozaki; Hiroaki Matsumura; Yasunobu Sugimoto; Shin-ichi Nagahama; Takashi Mukai
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Paper Abstract

Since the first demonstration of a pulsed InGaN laser diodes (LDs) grown on sapphire substrate in 1995, we have been developing longer lifetime and higher optical output power LDs in the 400 - 410 nm wavelength range. Moreover, we have already succeeded in the expansion of the lasing wavelength range from ultraviolet (UV) to blue-green. In this paper, we reported the recent progress of high-power and wide wavelength range GaN-based LDs with an optical output power of 20 mW single mode (375nm), 160 mW single mode (405nm), 200 mW multi mode (405nm), 50 mW single mode (445nm), 300 mW multi mode (445nm), and 20 mW single mode (473nm).

Paper Details

Date Published: 21 February 2006
PDF: 12 pages
Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 613306 (21 February 2006); doi: 10.1117/12.641460
Show Author Affiliations
Tokuya Kozaki, Nichia Corp. (Japan)
Hiroaki Matsumura, Nichia Corp. (Japan)
Yasunobu Sugimoto, Nichia Corp. (Japan)
Shin-ichi Nagahama, Nichia Corp. (Japan)
Takashi Mukai, Nichia Corp. (Japan)

Published in SPIE Proceedings Vol. 6133:
Novel In-Plane Semiconductor Lasers V
Carmen Mermelstein; David P. Bour, Editor(s)

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