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Proceedings Paper

Coherent plasmons in InSb
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Paper Abstract

We study coherent plasmons in the narrow-gap semiconductor InSb by measuring the far-infrared electromagnetic radiation they emit. These collective oscillations are excited with ultrashort, near-infrared laser pulses having photon energy far above the semiconductor band gap. Coherent plasmon behavior is characterized as a function of temperature, doping density, optically injected carrier density, and spatial confinement.

Paper Details

Date Published: 15 February 2006
PDF: 10 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180W (15 February 2006); doi: 10.1117/12.641284
Show Author Affiliations
Michael P. Hasselbeck, Univ. of New Mexico (United States)
Denis Seletskiy, Univ. of New Mexico (United States)
L. Ralph Dawson, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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