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Proceedings Paper

Analysis of photoluminescence decay of excitons in CuInS2 crystals
Author(s): K. Wakita; K. Nishi; H. Ohta
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Paper Abstract

The time-resolved photoluminescence of free and bound excitons in bulk single-crystal CuInS2 grown by the traveling heater method is examined. It is found that radiative decay of the free exciton at 1.535 eV and the bound exciton at 1.530 eV is exponential with two characteristic decay-times while that of the bound excitons at 1.525 and 1.520 eV is well-represented by a single exponent at low temperatures. The radiative lifetimes of the free exciton and the bound excitons at 1.530, 1.525, and 1.520 eV are obtained to be 320 ps, 500 ps, 2.1 ns, and 3.5 ns, respectively. A thermal release process of the observed bound excitons is discussed in terms of the obtained activation energy. The capture center cross-section for free exciton is also estimated. According to our estimates, a neutral charge is to be assigned to the defect centers associated with the observed bound excitons.

Paper Details

Date Published: 15 February 2006
PDF: 7 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180G (15 February 2006); doi: 10.1117/12.641134
Show Author Affiliations
K. Wakita, Osaka Prefecture Univ. (Japan)
K. Nishi, Osaka Prefecture Univ. (Japan)
H. Ohta, Osaka Prefecture Univ. (Japan)

Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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