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Proceedings Paper

GaN quantum dots: nanophotonics and nanophononics
Author(s): Takayuki Yamanaka; Dimitri Alexson; Michael A. Stroscio; Mitra Dutta; Jay Brown; Pierre Petroff; James Speck
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Paper Abstract

Self-assembled GaN quantum dots are characterized using Raman techniques. The electrical and optical properties of these GaN quantum dots are modeled in light of optoelectronic applications. Strain-induced changes in the phononic properties of these nanostructures are modeled and the strain-induced frequency shifts are compared with Raman measurements. Acoustic phonons in colloidal GaN quantum dots are modeled using a quantized elastic continuum model. Shifts observed in the Raman signatures for different excitation wavelengths provide evidence the Raman signatures of GaN quantum dots are observed.

Paper Details

Date Published: 28 February 2006
PDF: 12 pages
Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270I (28 February 2006); doi: 10.1117/12.641062
Show Author Affiliations
Takayuki Yamanaka, Univ. of Illinois at Chicago (United States)
Dimitri Alexson, Univ. of Illinois at Chicago (United States)
Michael A. Stroscio, Univ. of Illinois at Chicago (United States)
Mitra Dutta, Univ. of Illinois at Chicago (United States)
Jay Brown, Univ. of California, Santa Barbara (United States)
Pierre Petroff, Univ. of California, Santa Barbara (United States)
James Speck, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 6127:
Quantum Sensing and Nanophotonic Devices III
Manijeh Razeghi; Gail J. Brown, Editor(s)

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