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Proceedings Paper

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells
Author(s): Z. Sun; Z. Y. Xu; X. D. Yang; B. Q. Sun; Y. Ji; S. Y. Zhang; H. Q. Ni; Z. C. Niu
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Paper Abstract

The nonradiative recombination effect on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by photoluminescence and time-resolved photoluminescence under various excitation intensities and temperatures. It is found that the PL decay dynamics strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual non-exponential behavior and show a convex shape. By introducing a new concept of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. In the cw PL measurement, a rapid PL quenching is observed even at very low temperature and is of the excitation power dependence. These results further demonstrate that the non-radiative recombination process plays a very important role on the optical properties of GaInNAs/GaAs quantum wells.

Paper Details

Date Published: 15 February 2006
PDF: 9 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180Z (15 February 2006); doi: 10.1117/12.640380
Show Author Affiliations
Z. Sun, Institute of Semiconductors (China)
Z. Y. Xu, Institute of Semiconductors (China)
X. D. Yang, Institute of Semiconductors (China)
B. Q. Sun, Institute of Semiconductors (China)
Y. Ji, Institute of Semiconductors (China)
S. Y. Zhang, Institute of Semiconductors (China)
H. Q. Ni, Institute of Semiconductors (China)
Z. C. Niu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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