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Proceedings Paper

Sub-picosecond exciton spin-relaxation in GaN
Author(s): Atsushi Tackeuchi; Takamasa Kuroda; Hirotaka Otake; Kazuyoshi Taniguchi; Takako Chinone; Ji-Hao Liang; Masataka Kajikawa; Naochika Horio
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Paper Abstract

Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T -1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

Paper Details

Date Published: 15 February 2006
PDF: 8 pages
Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 611803 (15 February 2006); doi: 10.1117/12.640263
Show Author Affiliations
Atsushi Tackeuchi, Waseda Univ. (Japan)
Takamasa Kuroda, Waseda Univ. (Japan)
Hirotaka Otake, Waseda Univ. (Japan)
Kazuyoshi Taniguchi, Stanley Electric Co. Ltd. (Japan)
Takako Chinone, Stanley Electric Co. Ltd. (Japan)
Ji-Hao Liang, Stanley Electric Co. Ltd. (Japan)
Masataka Kajikawa, Stanley Electric Co. Ltd. (Japan)
Naochika Horio, Stanley Electric Co. Ltd. (Japan)


Published in SPIE Proceedings Vol. 6118:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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