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Proceedings Paper

Development of device fabrication process for strained layer superlattice IR detectors
Author(s): David R. Rhiger; Robert E. Kvaas; Michael Liguori; Michael A. Gritz; Gina Crawford; Cory J. Hill
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Paper Abstract

We report on progress in the development of a device fabrication process for type-II strained layer superlattice IR detectors, composed of InAs/GaSb or InAs/GaInSb. Steps of the process include etching the mesas, cleaning up the surface, and applying a surface passivation treatment. Certain etchants have been evaluated and calibrated. The surface has been studied with single wavelength ellipsometry and results have been compared with modeled ellipsometry values, revealing effects of surface residues and surface roughness. An initial investigation of ammonium sulfide treatment for surface passivation has been made. Initial measurements of the IR transmission of the GaSb substrate have also been made to determine how much thinning is needed for back side illuminated operation of the IR detectors.

Paper Details

Date Published: 28 February 2006
PDF: 11 pages
Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 61270Z (28 February 2006); doi: 10.1117/12.640084
Show Author Affiliations
David R. Rhiger, Raytheon Vision Systems (United States)
Robert E. Kvaas, Raytheon Vision Systems (United States)
Michael Liguori, Raytheon Vision Systems (United States)
Michael A. Gritz, Raytheon Vision Systems (United States)
Gina Crawford, Raytheon Vision Systems (United States)
Cory J. Hill, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 6127:
Quantum Sensing and Nanophotonic Devices III
Manijeh Razeghi; Gail J. Brown, Editor(s)

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