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Proceedings Paper

Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110)
Author(s): A. M. Rasulov; A. A. Dzhurakhalov; F. F. Umarov; Sh. D. Sultonov; A. Khaydarov
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Paper Abstract

A comparative study of 1-5 keV P+ ions channeling in thin (dZ=5OOÅ) and thick Si(110), SiC(110), GaP(110) and AsGa(110) crystals has been carried out by computer simulation within binary collision approximation. The ion ranges, energy losses, angular and energy distributions, as well as depth profile distribution have been calculated. It was shown that for paraxial part of a beam the main contribution to the total energy losses comes from inelastic ones. It has been established that energy and depth profile distributions depend on width of channel in the direction <110> and mass of target atoms.

Paper Details

Date Published: 7 December 2006
PDF: 5 pages
Proc. SPIE 5974, International Conference on Charged and Neutral Particles Channeling Phenomena, 59740I (7 December 2006); doi: 10.1117/12.639990
Show Author Affiliations
A. M. Rasulov, Ferghana Polytechnic Institute (Uzbekistan)
A. A. Dzhurakhalov, Arifov Institute of Electronics (Uzbekistan)
F. F. Umarov, Almaty Technological Univ. (Kazakhstan)
Sh. D. Sultonov, Ferghana Polytechnic Institute (Uzbekistan)
A. Khaydarov, Ferghana Polytechnic Institute (Uzbekistan)

Published in SPIE Proceedings Vol. 5974:
International Conference on Charged and Neutral Particles Channeling Phenomena
Sultan B. Dabagov, Editor(s)

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