Share Email Print
cover

Proceedings Paper

Hot carrier photocapacitive effect
Author(s): Steponas Ašmontas; Jonas Gradauskas; Algirdas Sužiedėlis; Edmundas Širmulis; Antanas Urbelis
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Semiconductor p-n and metal-insulator-semiconductor structures containing a capacitive element were investigated under pulsed ir laser irradiation. It is shown that the carrier heating in the structures is responsible for the rise of the photosignal. A direct correlation between the photosignal and the capacitance of the structures is confirmed. Possible applications of the effect are discussed.

Paper Details

Date Published: 13 June 2006
PDF: 6 pages
Proc. SPIE 5946, Optical Materials and Applications, 594619 (13 June 2006); doi: 10.1117/12.639324
Show Author Affiliations
Steponas Ašmontas, Semiconductor Physics Institute (Lithuania)
Jonas Gradauskas, Semiconductor Physics Institute (Lithuania)
Vilniaus Gediminas Technical Univ. (Lithuania)
Algirdas Sužiedėlis, Semiconductor Physics Institute (Lithuania)
Vilniaus Gediminas Technical Univ. (Lithuania)
Edmundas Širmulis, Semiconductor Physics Institute (Lithuania)
Antanas Urbelis, Vilniaus Gediminas Technical Univ. (Lithuania)


Published in SPIE Proceedings Vol. 5946:
Optical Materials and Applications
Arnold Rosental, Editor(s)

© SPIE. Terms of Use
Back to Top