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Proceedings Paper

Semiconductor quantum dot lasers
Author(s): Victor Ustinov; Alexey Zhukov; Anton Egorov; Alexey Kovsh; Nikolai Maleev; Elizaveta Semenova; Mikhail Maximov; Nikolai Ledentsov; Zhores Alferov
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Paper Abstract

Quantum dot (QD) diode lasers attract currently much attention due to their ability to emit light in the advanced near- infrared region at extraordinarily low threshold current densities. A vertical-cavity surface emitting laser (VCSEL), having a superior beam quality, improved temperature stability, low threshold current, and cost-effective planar fabrication, is also an attractive device variant. Here we discuss the state of the art of these lasers intended for the use in 1.3-μm fiber-optic communications. The discussion is centered on an InAs/GaAs semiconductor QD system. Basic issues of the QD synthesis in the system are addressed. The achievement of the control over the 1.3-μm QD emission is demonstrated. Both, wide-stripe and single-mode edge-emitting lasers are described. The lasers designed have a very low threshold current density, high differential efficiency, and a high output power. Narrow-stripe 1.3-μm QD lasers generate in a single mode, have a record-low threshold current, and produce the continuous-wave (CW) power output in excess of 100 mW. Also, we report on QD VCSELs emitting at 1.3 μm. The design of their cavity and active region are described. The room-temperature CW output power of these lasers is as high as 2 mW. Both, the edge- and surface-emitting lasers satisfy the demands of the fiber optical communication technology.

Paper Details

Date Published: 13 June 2006
PDF: 17 pages
Proc. SPIE 5946, Optical Materials and Applications, 594615 (13 June 2006); doi: 10.1117/12.639318
Show Author Affiliations
Victor Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
Anton Egorov, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai Maleev, A.F. Ioffe Physico-Technical Institute (Russia)
Elizaveta Semenova, A.F. Ioffe Physico-Technical Institute (Russia)
Mikhail Maximov, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolai Ledentsov, A.F. Ioffe Physico-Technical Institute (Russia)
Zhores Alferov, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5946:
Optical Materials and Applications
Arnold Rosental, Editor(s)

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