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Proceedings Paper

InP-based vertical cavity surface emitting lasers for 10G applications
Author(s): N. Nishiyama; C. Caneau; C. E. Zah
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Paper Abstract

InP-based vertical cavity surface emitting lasers (VCSELs) with AlGaInAs QWs and AlGaInAs/InP DBR have been demonstrated. Over 2 mW and 0.8 mW single-mode powers at 1.3 μm have been achieved at 25 °C and 85 °C, respectively. A high eye-diagram margin at 10 Gbit/s modulation was demonstrated using 13 GHz maximum relaxation oscillation frequency VCSELs. This high relaxation oscillation frequency enables the achievement, without optical isolator, of error-free transmission under 10 Gbit/s modulation with high optical reflection. To achieve stable polarization operation, 1.3 μm VCSELs on InP(311)A substrate have been realized and showed very stable polarization behavior.

Paper Details

Date Published: 23 November 2005
PDF: 9 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602001 (23 November 2005); doi: 10.1117/12.638988
Show Author Affiliations
N. Nishiyama, Corning Inc. (United States)
C. Caneau, Corning Inc. (United States)
C. E. Zah, Corning Inc. (United States)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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