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Design and characteristics of L-C thin films filter at microwave frequency band
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Paper Abstract

Multifunction corresponding to multimedia age has furthermore required high integration to the devices at microwave band, so more evolution for multi-layer integration like system on chip(SoC) becomes to be necessary. In wireless mobile communication, portable mobile phones grew up to a huge market. Microwave devices have played an important role in the wireless communication systems. One challenge in the implementation of circuit integration is in the design of micro wave band pass filter with thin film MOM capacitor and spiral inductor. In this paper, Cu and TaO thin film with RF sputtering was deposited for inductor and capacitor on the SiO2/Si(100) substrate. MIM capacitor and spiral inductor was fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, an important devices for mobile communication. Based on the high-Q values of passive components, MIM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and was 5 dB for a 900 MHz filter. This paper also discusses a theoretical analysis and practical design to L-C band pass filter.

Paper Details

Date Published: 5 January 2006
PDF: 6 pages
Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 60351R (5 January 2006); doi: 10.1117/12.638539
Show Author Affiliations
In-Sung Kim, Korea Electrotechnology Research Institute (South Korea)
Bok-Ki Min, Korea Electrotechnology Research Institute (South Korea)
Jae-Sung Song, Korea Electrotechnology Research Institute (South Korea)

Published in SPIE Proceedings Vol. 6035:
Microelectronics: Design, Technology, and Packaging II
Alex J. Hariz, Editor(s)

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