Share Email Print
cover

Proceedings Paper

Carbon-nanotube-based nanoelectromechanical switch
Author(s): Jeong Won Kang; Ki Ryang Byun; Ki Oh Song; Ho Jung Hwang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

A nanoelectromechanical model based on atomistic simulations including charge transfer was investigated. Classical molecular dynamics method combined with continuum electric models could be applied to a carbon-nanotube nanoelectromechanical memory device that could be characterized by carbon-nanotube bending performance by atomistic capacitive and interatomic forces. The capacitance of the carbon atom was changed with the height of the carbon atom. We performed MD simulations for a suspended (5,5) carbon-nanotube-bridge with the length of 11.567 nm (LCNT) and the depth of the trench of 0.9 ~ 1.5 nm (H). After the carbon-nanotube collided on the gold surface, the carbon-nanotube-bridge oscillated on the gold surface with amplitude of ~1 Å, and the amplitude gradually decreased. When H ≤ 1.3 nm, the carbon-nanotube-bridge continually contacted with the gold surface after the first collision. When H ≥ 1.4 nm, the carbon-nanotube-bridge stably contacted with the gold surface after several rebounds. As H increased, the threshold voltage linearly increased. As the applied bias increased, the transition time exponentially decreased at each trench depth. When H / LCNT was below 0.13, the carbon-nanotube nanoelectromechanical memories were permanent nonvolatile memory devices, whereas the carbon-nanotube nanoelectromechanical memories were volatile memory or switching devices when H / LCNT was above 0.14. The turn-on voltages and tunneling resistances obtained from our simulations are compatible to those obtained from previous experimental and theoretical results.

Paper Details

Date Published: 4 January 2006
PDF: 11 pages
Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 603719 (4 January 2006); doi: 10.1117/12.638440
Show Author Affiliations
Jeong Won Kang, Chung-Ang Univ. (South Korea)
Ki Ryang Byun, Chung-Ang Univ. (South Korea)
Ki Oh Song, Chung-Ang Univ. (South Korea)
Ho Jung Hwang, Chung-Ang Univ. (South Korea)


Published in SPIE Proceedings Vol. 6037:
Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David V. Thiel, Editor(s)

© SPIE. Terms of Use
Back to Top