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Proceedings Paper

Organic quantum well light emitting diodes
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Paper Abstract

This work reports on simulation and experimental investigation into the charge transport and electroluminescence in a quantum well (QW) organic light emitting diode (OLED) consisting of a N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer, tris (8-hydroxyquinoline) aluminum (Alq3) as a potential barrier and electron transporting layer, and rubrene as potential well layer. Indium tin oxide was used as an anode, while LiF/Al was employed as a cathode. The carrier transport was simulated using one-dimensional time-independent drift-diffusion model. The influence of the well width, barrier width, and the number of QWs on the carrier distribution, recombination rate, and device performance was investigated. Finally, the device structures which yielded most promising simulation results were fabricated and characterized. The comparison between the experimental and theoretical results is discussed.

Paper Details

Date Published: 18 January 2006
PDF: 10 pages
Proc. SPIE 6038, Photonics: Design, Technology, and Packaging II, 60381M (18 January 2006); doi: 10.1117/12.638370
Show Author Affiliations
J. Chan, The Univ. of Queensland (Australia)
Albert W. Lu, The Univ. of Queensland (Australia)
Alan Man Ching Ng, The Univ. of Hong Kong (Hong Kong China)
A. B. Djurišić, The Univ. of Hong Kong (Hong Kong China)
Aleksander D. Rakić, The Univ. of Queensland (Australia)

Published in SPIE Proceedings Vol. 6038:
Photonics: Design, Technology, and Packaging II
Derek Abbott; Yuri S. Kivshar; Halina H. Rubinsztein-Dunlop; Shanhui Fan, Editor(s)

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