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Proceedings Paper

Nitridation of thin metal layers by plasma immersion ion implantation for diffusion barrier applications
Author(s): Mukesh Kumar; Rajkumar Rajkumar; Dinesh Kumar
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Paper Abstract

For this study, Ti/Si and Ta/Si structures were implanted with two doses of nitrogen 1015 ions/cm2 (low dose) and 1017 ions/cm2 (high dose) at 10KeV and 20KeV energy. Characterization was performed by Sheet resistance measurement and X-Ray diffraction (XRD) techniques. Results shows that implantation of 1015 ions/cm2 dose of nitrogen does not cause any nitridation, while in case of high dose implanted samples formation of tantalum nitride phase was observed. Nitride layers formed this way was used as diffusion barrier layers for copper metallization in Silicon based integrated circuits.

Paper Details

Date Published: 3 January 2006
PDF: 6 pages
Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371E (3 January 2006); doi: 10.1117/12.638332
Show Author Affiliations
Mukesh Kumar, Kurukshetra Univ. (India)
Vaish College, Rohtak (India)
Rajkumar Rajkumar, Kurukshetra Univ. (India)
Semiconductor Complex Ltd. (India)
Dinesh Kumar, Kurukshetra Univ. (India)


Published in SPIE Proceedings Vol. 6037:
Device and Process Technologies for Microelectronics, MEMS, and Photonics IV
Jung-Chih Chiao; Andrew S. Dzurak; Chennupati Jagadish; David V. Thiel, Editor(s)

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