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Proceedings Paper

Numerical simulation of photosensitive pixels
Author(s): Andrew A. Pugachev
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Paper Abstract

The classification of solid-state electron device models on a basis of its computation process organization structure complications are described. The greatest parts of numerical simulation methodology of photosensitive VLSI pixels are the planning of simulation procedure and numerical modeling results verification procedure. To design the optimal simulation methodology leads to obtain the accurate data for practical design of photosensitive pixels. This paper also gives examples of optimized CCD pixel design using special methodology of simulation.

Paper Details

Date Published: 6 December 2006
PDF: 12 pages
Proc. SPIE 5944, Smart Imagers and Their Application, 594408 (6 December 2006); doi: 10.1117/12.637786
Show Author Affiliations
Andrew A. Pugachev, Institute of Design Problems in Microelectronics (Russia)


Published in SPIE Proceedings Vol. 5944:
Smart Imagers and Their Application
Alexander L. Stempkovsky; Victor A. Shilin, Editor(s)

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