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Proceedings Paper

New contact stacks with platinum silicide layers
Author(s): Dmitro Kolesnikov
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Paper Abstract

The PtSi layer and PtSi/Al, PtSi/AlCuSi, PtSi / TiW / AlCuSi, Ti /Ni / Ag, Al / Ti / Ni / Ag stacks were tested as the anode contact of high-power P-i-N diode. The forward voltage drop (VF), differential resistance (Rdiff) and crossing point current (IXing) of diodes were evaluated from the forward I-V curves at different temperatures measured in four point arrangement. The lowest magnitude of contact resistivity and poor thermal stability were obtained for the case of diode with PtSi contact. The additional layers have improved the temperature stability of this contact. It has led to the increase of contact resistance, but the PtSi layer is still possible to use as a source of Pt for further local lifetime control operation.

Paper Details

Date Published: 6 December 2006
PDF: 5 pages
Proc. SPIE 5944, Smart Imagers and Their Application, 594404 (6 December 2006); doi: 10.1117/12.637773
Show Author Affiliations
Dmitro Kolesnikov, Czech Technical Univ. (Czech Republic)

Published in SPIE Proceedings Vol. 5944:
Smart Imagers and Their Application
Alexander L. Stempkovsky; Victor A. Shilin, Editor(s)

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