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Proceedings Paper

SiGe HBT and SiGe MOSFET analysis for high-speed optical networks
Author(s): Konstantin O. Petrosjanc; Nikita I. Ryabov; Rostislav A. Torgovnikov
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Paper Abstract

This paper provides a TCAD analysis of high performance SiGe heterostructure bipolar and MOSFET transistors fabricated by SiGe BiCMOS technology. The bipolar and MOSFET devices characteristics are presented. High values of operation frequencies, current gains and transconductances of the devices satisfy the requirements in RF mixed-signal IC development for wired optical communication systems.

Paper Details

Date Published: 6 December 2006
PDF: 8 pages
Proc. SPIE 5944, Smart Imagers and Their Application, 594403 (6 December 2006); doi: 10.1117/12.637771
Show Author Affiliations
Konstantin O. Petrosjanc, Moscow State Institute of Electronics and Mathematics (Russia)
Nikita I. Ryabov, Moscow State Institute of Electronics and Mathematics (Russia)
Rostislav A. Torgovnikov, Moscow State Institute of Electronics and Mathematics (Russia)


Published in SPIE Proceedings Vol. 5944:
Smart Imagers and Their Application
Alexander L. Stempkovsky; Victor A. Shilin, Editor(s)

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