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Proceedings Paper

Silicon photodetectors for longwave infrared focal plane arrays
Author(s): Vladimir V. Chernokozhin
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Paper Abstract

Review on peculiarities and tendencies of multielement JR photodetectors development are considered. The place and prospects of extrinsic silicon longwave JR sensors and focal plane arrays (FPAs) are discussed. The achieved results and predicted characteristics show, that these devices are capable to provide the highest photoelectric characteristics and simultaneously cheapness, productivity, high reliability and durability of longwave JR photodetection devices.

Paper Details

Date Published: 6 December 2006
PDF: 12 pages
Proc. SPIE 5944, Smart Imagers and Their Application, 594402 (6 December 2006); doi: 10.1117/12.637768
Show Author Affiliations
Vladimir V. Chernokozhin, SPE Pulsar (Russia)

Published in SPIE Proceedings Vol. 5944:
Smart Imagers and Their Application
Alexander L. Stempkovsky; Victor A. Shilin, Editor(s)

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