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Proceedings Paper

Overview of SEMATECH's EUVL program
Author(s): Stefan Wurm
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Paper Abstract

SEMATECH's Extreme Ultra-Violet Lithography (EUVL) program addresses key critical issues of EUV technology in the source, mask, optics, and resist areas to enable EUV infrastructure readiness for the 45 nm half-pitch node and its extensibility for the 32 nm half-pitch node and beyond. The SEMATECH Mask Blank Development Center (MBDC) in Albany, New York, focuses on demonstrating defect free masks blanks by the end of 2007. In the EUV source area, SEMATECH is working with universities and national laboratories to understand high power source fundamentals and limitations. SEMATECH enables neutral site benchmarking of source supplier progress using in-dustry wide accepted source metrology. Source critical component lifetime and condenser erosion are being ad-dressed on theoretical and experimental levels with SEMATECH providing a neutral site condenser materials erosion benchmarking facility. SEMATECH EUV optics projects are focused on understanding projection optics contamina-tion and lifetime, validating accelerated testing, and benchmarking testing approaches to enable development of an industry wide accepted testing protocol. The SEMATECH EUV Resist Test Center (RTC) in Albany with its high throughput NA=0.3 Micro Exposure Tool (MET) and the SEMATECH MET at Berkeley with its variable illumina-tion enable fundamental resist work by providing test beds for new resists that have to simultaneously meet stringent resolution, line edge roughness, and sensitivity requirements.

Paper Details

Date Published: 16 June 2005
PDF: 18 pages
Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637331
Show Author Affiliations
Stefan Wurm, SEMATECH, Inc. (United States)


Published in SPIE Proceedings Vol. 5835:
21st European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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