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Proceedings Paper

Gaussian beam writing strategy: accuracy of using the shape beam simulator SELID for Gaussian beam systems
Author(s): J. H. Tortai; J. Thiault; R. Tiron; L. Mollard; Stephan Haefele; Sergey Vychub; John Lewellen; Peter Brooker
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Paper Abstract

Obtaining highly aggressive resolution with E-Beam direct writing needs accurate simulation tools. SIGMA-C software SELIDTM allows simulating patterns profiles transferred into a resist film in the case of a Shaped Beam system. However EBeam tools that allow achieving very high resolution, especially for dense patterns, are Gaussian Beam systems. This article deals with the comparison of experimental lines obtained with a Gaussian Beam writing system and with simulation by SELIDTM of such lines. A negative chemically amplified photo resist (NEB22, Sumitomo) was exposed by our Leica UHR 100 keV. By using a high beam step size with a Gaussian spot 5 nm of FWHM (Full Width at Half Maximum), we showed that Shaped Beam simulations obtained with SELIDTM are accurate compared to experiments.

Paper Details

Date Published: 16 June 2005
PDF: 7 pages
Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637286
Show Author Affiliations
J. H. Tortai, LTM, CNRS (France)
J. Thiault, LTM, CNRS (France)
R. Tiron, LETI, CEA (France)
L. Mollard, LETI, CEA (France)
Stephan Haefele, SIGMA-C (Germany)
Sergey Vychub, SIGMA-C (Germany)
John Lewellen, SIGMA-C (United States)
Peter Brooker, SIGMA-C (United States)


Published in SPIE Proceedings Vol. 5835:
21st European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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