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Proceedings Paper

Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects
Author(s): Andreas Erdmann
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Paper Abstract

This paper reviews state of the art mask modeling for optical lithography. Rigorous electromagnetic field (EMF) simu-lation of light diffraction from optical masks is compared to the traditional assumption of an infinitely thin mask, the so called Kirchhoff approach. Rigorous EMF simulation will be employed to analyze mask polarization phenomena which become important in the ultrahigh NA regime. Several important lithographic phenomena, which can be explained only with rigorous EMF simulation, are discussed. This includes the printability of small assist features, intensity imbalanc-ing for alternating PSM, and process window deformations. The paper concludes with a discussion on material issues and algorithmic extensions which will be necessary for an accurate modeling of future mask technology.

Paper Details

Date Published: 16 June 2005
PDF: 13 pages
Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637285
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute of Integrated Systems and Device Technology (Germany)


Published in SPIE Proceedings Vol. 5835:
21st European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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