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Proceedings Paper

The interaction of mask manufacturability and alt PSM design parameters
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Paper Abstract

For the production of process generations below 100nm, double exposure alternating Phase Shift Masks (Alt.PSM) has been recognized as a proven wafer imaging technique. The large process window and relatively stable process control is seen as one of the advantages of this technology as compared with other RET approaches. The exceptional MEEF performance of the Alt. PSM is also an important factor as it makes the wafer Critical Dimension (CD) control less susceptible to CD errors on the mask. In this work a mask manufacturing simplification technique is studied and an improvement to overall manufacturability and cycle time is demonstrated through reductions in data volume and write time.

Paper Details

Date Published: 16 June 2005
PDF: 6 pages
Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637284
Show Author Affiliations
B. S. Kasprowicz, Photronics Inc. (United States)
P. J. M. van Adrichem, Synopsys Inc. (United States)


Published in SPIE Proceedings Vol. 5835:
21st European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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