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Proceedings Paper

Liquid phase epitaxial growth and characterization of III-V compound semiconductors
Author(s): B. M. Arora
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Paper Abstract

In this article we describe the sali ent features of the classical LPE technique with special reference to A1GaAS and InGaAsP. We also review the work of very thin layers for quantum well structures.

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.637279
Show Author Affiliations
B. M. Arora, Tata Institute of Fundamental Research (India)

Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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