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Proceedings Paper

Application of PGSD (proximity gap suction development) to 70 nm NAND mask fabrication
Author(s): Hideaki Sakurai; Tooru Shibata; Masamitsu Itoh; Kotaro Ooishi; Hideo Funakoshi; Yoshiki Okamoto; Shigemi Oono; Masatoshi Kaneda; Shigenori Kamei; Naoya Hayashi
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Paper Abstract

CD error caused by loading effect is becoming a significant issue in mask fabrication. At the same time, quantification method of CD error caused by loading effect has not been established in many cases because it is very difficult to measure the error according to various coverages. In previous studies, we presented the development equipment named PGSD (Proximity Gap Suction Development). PGSD can reduce loading error of development process by using of nozzles to spout developer and suck in dirty developer. However, in the case of using PGSD for development process, CD error caused by loading effect seems to still remain. In this paper, we propose a new method to quantify the error caused by loading effect, and estimate the development-induced error out of total CD error. We evaluated 70 nm NAND mask by investigating the correlation between CD and coverage. Moreover, we discuss the residual CD error excluding the loading effect.

Paper Details

Date Published: 16 June 2005
PDF: 8 pages
Proc. SPIE 5835, 21st European Mask and Lithography Conference, (16 June 2005); doi: 10.1117/12.637275
Show Author Affiliations
Hideaki Sakurai, Toshiba Corp. (Japan)
Tooru Shibata, Toshiba Corp. (Japan)
Masamitsu Itoh, Toshiba Corp. (Japan)
Kotaro Ooishi, Tokyo Electron Kyushu Ltd. (Japan)
Hideo Funakoshi, Tokyo Electron Kyushu Ltd. (Japan)
Yoshiki Okamoto, Tokyo Electron Kyushu Ltd. (Japan)
Shigemi Oono, Tokyo Electron Kyushu Ltd. (Japan)
Masatoshi Kaneda, Tokyo Electron Kyushu Ltd. (Japan)
Shigenori Kamei, Tokyo Electron Kyushu Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5835:
21st European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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