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Proceedings Paper

Output characteristics of nonlinear photoconductive semiconductor switches triggered by laser diode
Author(s): Yanling Sun; Shunxiang Shi; Xin Wu; Yanwu Zhu
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Paper Abstract

The effect of bias voltage on the characteristic of GaAs photoconductive semiconductor switches (PCSS) was investigated theoretically and experimentally. The outputs of the switches for different bias voltages were obtained by solving the basic equations of transient model of PCSS. With a bias voltage of 2400V and triggered by a laser diode, the high gain PCSS switched a electric pulse with voltage up to 1700V. The simulated results agree with the experiment observations well. A new phenomenon of carriers accumulation effect was found.

Paper Details

Date Published: 3 December 2005
PDF: 7 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602026 (3 December 2005); doi: 10.1117/12.637097
Show Author Affiliations
Yanling Sun, Xidian Univ. (China)
Shunxiang Shi, Xidian Univ. (China)
Xin Wu, Xidian Univ. (China)
Yanwu Zhu, Xidian Univ. (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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