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Proceedings Paper

Optically tuned characteristics of an ion-implanted GaAs OPFET
Author(s): B. B. Pal
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Paper Abstract

Optically tuned GaAs OPFET Is a potential device for integrated Optics Optical Communication and Computing. The transient analysis of an ion implanted GaAs OPFET shows that the carriers generated in the gate depletion region due to absorption of photons attains the steady state value after 40 ps. The D. C. analysis indicates that a analysis normally ON device becomes OFF at a higher negative gate voltage compared to the dark condition and a normally OFF device is opened even at zero gate bias. The drainsource current and the transconductance are significantly enhanced due to optical radiation. In the a. c. analysis the optical radiation is modulated by the signal and hence the number of electronhole pairs generated below the gate is also modulated. So the device properties are greatly influenced by the modulated frequency.

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.637053
Show Author Affiliations
B. B. Pal, Banaras Hindu Univ. (India)

Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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