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Proceedings Paper

Recent developments in the optical measurement of surface fields on silicon photoconductive power switches
Author(s): Harshad P. Sardesai; William C. Nunnally; Paul Frazer Williams
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Paper Abstract

We report further investigations of the surface electric fields present between the contacts ofan optically controlled silicon switch. The Kerr electro-optic effect and a phase sensitive interferometric analyzer is used to measure the surface fields when a pulsed high voltage is applied across the contacts. The experimental arrangement has a temporal resolution of 100 nanoseconds and a spatial resolution of 50 microns. The experimental results show preferential field enhancement near the anode and the surface electric fields are nonuniform in space and time. The temporal non-uniformity is more pronounced at higher electric fields.

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636998
Show Author Affiliations
Harshad P. Sardesai, Univ. of Texas/Arlington (United States)
William C. Nunnally, Univ. of Texas/Arlington (United States)
Paul Frazer Williams, Univ. of Nebraska/Lincoln (United States)


Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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