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Proceedings Paper

Monolithic MSM photodetector/amplifier optical receiver on GaAs substrate
Author(s): D. C. Dumka; Mousumi Mazumdar; M. S. Yadav; Babu Ram Singh
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Paper Abstract

A monoli thi c opti cal rcei vex' consisting of an MSM-PD and MESFET anp1ifiez' for near 850nrn wavelength applications has been designed and fabricated on GaAs substrate. The parameters avaluated on fabricated test structures such as 1pm MESFET and MSM-PD were used as the model parameters for receiver circuit simula tion. The mesa epitaxial 1pm MESFET. technology was used for receiver fabrication. The receiver module characterized for output response showed values close to the simulated values of 3dB upper cut-off frequency of 370MHz with a flat trazis impedance of 3.5KQ.

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636973
Show Author Affiliations
D. C. Dumka, Central Electronics Engineering Research Institute (India)
Mousumi Mazumdar, Central Electronics Engineering Research Institute (India)
M. S. Yadav, Central Electronics Engineering Research Institute (India)
Babu Ram Singh, Central Electronics Engineering Research Institute (India)


Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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