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Proceedings Paper

Time domain simulation and modeling of Si-GaAs MSM photodetectors
Author(s): R. T. Kollipara; Thomas K. Plant; Vijai K. Tripathi
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Paper Abstract

The two-dimensional modeling of the semi-insulating gallium arsenide (SI-GaAs) interdigitated photodetectors is presented. The model considers full bipolar transport, effects of nonuniform carrier generation, field dependent mobilities, carrier diffusion, recombination and includes the effects of the external circuit elements. Dynamic simulation is performed after applying an ideal optical impulse and the simulated response is compared with the experimentally observed response.

Paper Details

Date Published: 16 December 1992
PDF: 4 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636972
Show Author Affiliations
R. T. Kollipara, Oregon State Univ. (United States)
Thomas K. Plant, Oregon State Univ. (United States)
Vijai K. Tripathi, Oregon State Univ. (United States)


Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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