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Proceedings Paper

Growth and characterization of GaSb crystals: a promising optoelectronic material
Author(s): P. Dutta; H. L. Bhat; K. S. Sangunni; Vikram Kumar
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Paper Abstract

Gallium Antimonide Crystals were grown by the vertical Bridgman technique. The crystals were characterized using Xray analysis EDAX Chemical Etching Hall Effect measurements Photoluminescence spectroscopy and Raman spectroscopy. I

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636971
Show Author Affiliations
P. Dutta, Indian Institute of Science (India)
H. L. Bhat, Indian Institute of Science (India)
K. S. Sangunni, Indian Institute of Science (India)
Vikram Kumar, Indian Institute of Science (India)


Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies

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