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Proceedings Paper

Phonon and alloy disorder scattering in coherently strained SixGel-x/Si quantum wells used in photonic devices
Author(s): P. K. Basu; S. K. Paul
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Paper Abstract

In strained Si Ge i-x/Si quantum wells alloy-disorder and intervalley phonon scatterings are found to be weak. The calculated values of mobility are higher than in bulk silicon and closer to the recent experimental data and are mainly limited by deformation potential acoustic phonon scattering. I .

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636959
Show Author Affiliations
P. K. Basu, Calcutta Univ. (India)
S. K. Paul, Calcutta Univ. (India)


Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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