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Proceedings Paper

Interface structure of CoSi2 and HoSi2 epitaxies on silicon
Author(s): Sharath Dakshinamurthy; Krishna Rajan
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Paper Abstract

The occurrence of the defect structures in heteroepita. xies can be attributed to some low energy configuration of atoms at the interface which also result in specific orientation relationships between the epilayer and the substrate. Here we apply a generalized model to characterize the interfaces of CoSi2 and MoSi2 with silicon and compare the predictions of the models with TEM observations of the defect structure.

Paper Details

Date Published: 16 December 1992
PDF: 4 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636955
Show Author Affiliations
Sharath Dakshinamurthy, Rensselaer Polytechnic Institute (United States)
Krishna Rajan, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies

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