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Proceedings Paper

Growth and characterization of high quality strained GaAs Epitaxial Layers
Author(s): S. Dhar; Kanad Mallik
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Paper Abstract

Iritum arxi antincny-dcped strain layers of GaAs grcn by liquid phase epitaxy are st3.ted hy phcal, electrical and cçtical techniques . Doping ranges to obtain lci dislocaticri dsity GaAs are assessed. Nz deep levels associat1 with irx1izn arx antinony dopants are identified by photocurrent technique, and their possible origins are discussed.

Paper Details

Date Published: 16 December 1992
PDF: 4 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.636814
Show Author Affiliations
S. Dhar, Calcutta Univ. (India)
Kanad Mallik, Calcutta Univ. (India)

Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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