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Proceedings Paper

10-Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate
Author(s): Yu-Sheng Liao; Gong-Ru Lin; Chi-Kuan Lin; Yi-Shiang Chu; Hao-Chung Kuo; Milton Feng
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Paper Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz1/2, and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.

Paper Details

Date Published: 2 December 2005
PDF: 6 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602023 (2 December 2005); doi: 10.1117/12.636697
Show Author Affiliations
Yu-Sheng Liao, National Chiao Tung Univ. (Taiwan)
Gong-Ru Lin, National Chiao Tung Univ. (Taiwan)
Chi-Kuan Lin, National Chiao Tung Univ. (Taiwan)
Yi-Shiang Chu, National Chiao Tung Univ. (Taiwan)
Hao-Chung Kuo, National Chiao Tung Univ. (Taiwan)
Milton Feng, Univ. of Illinois at Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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