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Proceedings Paper

Investigation of the dependence of volume, cap layer, and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot
Author(s): Yumin Liu; Yuhong Liu; Zhongyuan Yu
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Paper Abstract

We systematically investigated the strain field distribution of conical-shaped InAs/GaAs self-organized quantum dot using the two-dimension axis-symmetry model. The normal strain, the hydrostatic and biaxial components along the center axis path of the quantum dots was analyzed. The dependence of these strain components on volume, height-over ratio and cap layer (covered by cap layer or uncovered quantum dot) are investigated for the quantum grown on the (001) substrate. The dependence of the carriers' confining potentials and electronic effective mass on the three circumstances discussed above is also calculated in the framework of eight-band kp theory. The numerical results are in good agreements with the experiment data in published literature.

Paper Details

Date Published: 6 December 2005
PDF: 8 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602014 (6 December 2005); doi: 10.1117/12.636558
Show Author Affiliations
Yumin Liu, Beijing Univ. of Posts and Telecommunications (China)
Key Lab. of Optical Communication and Lightwave Technologies (China)
Yuhong Liu, Shijiazhuang Railway Institute (China)
Zhongyuan Yu, Beijing Univ. of Posts and Telecommunications (China)
Key Lab. of Optical Communication and Lightwave Technologies (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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