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Proceedings Paper

High-gain InGaAsN materials
Author(s): C. S. Peng; J. Konttinen; T. Jouhti; M. Pessa
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Paper Abstract

Beryllium was incorporated in InGaAsN single quantum well (SQW). Comparing with the conventional InGaAsN SQW structures, photoluminescence (PL) investigations show a significant improvement. After 3000 sec of annealing at 700 °C, the PL peak area is about 20 times higher while the wavelength keeps 25 nm longer. After 800 sec of this annealing, the PL quenched slowly for the conventional structures because of the strain relaxation, while the PL of the new structures increased rapidly and show no saturation after 3000 sec of annealing. Laser processing based on the new InGaAsN structures resulted in one half of the threshold current density compare to conventional InGaAsN.

Paper Details

Date Published: 5 December 2005
PDF: 7 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200H (5 December 2005); doi: 10.1117/12.636510
Show Author Affiliations
C. S. Peng, Tampere Univ. of Technology (Finland)
J. Konttinen, Tampere Univ. of Technology (Finland)
T. Jouhti, Tampere Univ. of Technology (Finland)
M. Pessa, Tampere Univ. of Technology (Finland)

Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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