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Proceedings Paper

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method
Author(s): Yun Xu; Yuzhang Li; Guofeng Song; Qiaoqiang Gan; Qing Cao; Liang Guo; Lianghui Chen
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Paper Abstract

In AlGaInP/GaInP multi-quantum well (MQW) lasers, the electron leakage current is a much more serious problem than that in laser diodes with longer wavelength. To further improve the output performance, the leakage current should be analyzed. In this letter, the temperature dependence of electrical derivative characteristics in AlGaInP/GaInP multi-quantum well lasers was measured, and the potential barrier for electron leakage was obtained. With the help of secondary ion mass spectroscopy (SIMS) measurement, theoretical analysis of the potential barrier was presented and compared with the measurement result. The influence of p-cladding doping level and doping profile on the potential barrier was discussed, and this can be helpful in metalorganic chemical vapor deposition (MOCVD) growth.

Paper Details

Date Published: 3 December 2005
PDF: 4 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202F (3 December 2005); doi: 10.1117/12.636130
Show Author Affiliations
Yun Xu, Institute of Semiconductors (China)
Yuzhang Li, Institute of Semiconductors (China)
E-O National Co., Ltd. (China)
Guofeng Song, Institute of Semiconductors (China)
Qiaoqiang Gan, Institute of Semiconductors (China)
Qing Cao, Institute of Semiconductors (China)
E-O National Co., Ltd. (China)
Liang Guo, Institute of Semiconductors (China)
E-O National Co., Ltd. (China)
Lianghui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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