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Proceedings Paper

Amplification effect on stimulated Brillouin scattering in the forward-pumped S-band discrete DCF fibers Raman amplifier
Author(s): Zaixuan Zhang; Bizhi Dai; Laixiao Li; Haifeng Xu; Hongling Liu; Jianfeng Wang; Chenxia Li; Insoo S. Kim
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Paper Abstract

The amplification effect on forward and backward stimulated Brillouin scattering lines in the forward pumped S band discrete DCF fiber Raman amplifier (FRA) has been studied. The pumped threshold power of the forward first order Stokes SBS (FSB1- ), second order Stokes SBS (FSB2-) and third order SBS (FSB3-) in the forward pumped FRA are 1.5 mW, 1.4 mW and 1.7 mW respectively. The Stokes SBS lines are amplified by FRA and fiber Brillouin amplifier (FBA) at the same time. The gain of amplification is given as GA=GR multiplied by GB where GR is Raman gain and GB is Brillouin gain. In the experiments, the saturation gain of FSB1-, FSB2- and FSB3- are about 52dB, 65dB and 65dB respectively. The saturation Raman gain of 10km DCF forward FRA is about 14dB, so the Brillouin gain of FSB1- , FSB2- and FSB3- are about 38dB, 51dB and 51dBrespectively. There are pumped threshold power of the first order, second order and third order Stokes backward SBS (B-SBS) line BSB1-, BSB2- and BSB3- in the forward pumped discrete DCF FRA, and they are about 4.7mW, 17.1mW and 67mW respectively. The saturation gain of the first order, second and third Stokes backward SBS line BSB1-, BSB2-and BSB3- are about 60dB and the saturation gain of 10km DCF forward pumped FRA is about 27dB, so the gain of FBA is about 33dB. The forward and backward cascaded SBS lines have been observed.

Paper Details

Date Published: 6 December 2005
PDF: 11 pages
Proc. SPIE 6019, Passive Components and Fiber-based Devices II, 60191Z (6 December 2005); doi: 10.1117/12.636119
Show Author Affiliations
Zaixuan Zhang, China Jiliang Univ. (China)
Bizhi Dai, China Jiliang Univ. (China)
Laixiao Li, China Jiliang Univ. (China)
Haifeng Xu, China Jiliang Univ. (China)
Univ. of Shanghai for Science and Technology (China)
Hongling Liu, China Jiliang Univ. (China)
Univ. of Shanghai for Science and Technology (China)
Jianfeng Wang, China Jiliang Univ. (China)
Chenxia Li, China Jiliang Univ. (China)
Univ. of Shanghai for Science and Technology (China)
Insoo S. Kim, Korea Electrotechnology Research Institute (South Korea)


Published in SPIE Proceedings Vol. 6019:
Passive Components and Fiber-based Devices II
Yan Sun; Jianping Chen; Sang Bae Lee; Ian H. White, Editor(s)

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