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Proceedings Paper

CW operation of broad-area AlGaAs/GaAs diode lasers grown by MOCVD using TBA in N2 ambient
Author(s): Baoxue Bo; Xin Gao; Jing Zhang; Hui Li; Yi Qu; Baolin Zhang; Xiaohong Tang
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Paper Abstract

AlGaAs/GaAs material diode lasers grown by MOCVD using TBA as the group-V source and N2 as the carrier gas, was reported. Lasing has been successfully achieved with a low threshold current density of 506 A/cm2.

Paper Details

Date Published: 6 December 2005
PDF: 4 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202T (6 December 2005); doi: 10.1117/12.636018
Show Author Affiliations
Baoxue Bo, Changchun Univ. of Science and Technology (China)
Xin Gao, Changchun Univ. of Science and Technology (China)
Jing Zhang, Changchun Univ. of Science and Technology (China)
Hui Li, Changchun Univ. of Science and Technology (China)
Yi Qu, Changchun Univ. of Science and Technology (China)
Baolin Zhang, Jilin Univ. (China)
Xiaohong Tang, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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