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Proceedings Paper

Study of low temperature GaAs/InP wafer bonding
Author(s): Xingyan Wang; Hui Huang; Qi Wang; Xiaomin Ren; Yongqing Huang
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Paper Abstract

The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic. The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. In this method, the surfaces of two wafers are etched by sulfuric solution. Then following a thermal annealing process. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic through transmission electron microscope (SEM), interface I-V curve, X-ray diffraction (XRD), photoluminescence (PL) spectra, and so on. The optical characteristic of In0.53Ga0.47As/InP multi-quantum wells (MQWs) grown on an InP substrate, which was bonded to GaAs substrate was investigated by measuring photoluminescence (PL) spectra at room temperature. After bonding, neither wavelength shift nor degradation of full-width at half maximum (FWHM) was observed. And the PL intensities of the bonding sample increased about 50%. The bonding strength was found to be sufficiently high and could withstand the subsequent etching and polishing procedures of the bonded wafers. This low temperature wafer bonding method is very attractive to realize optical devices such as lasers, photodetectors and optical waveguides on lattice-mismatched substrates.

Paper Details

Date Published: 5 December 2005
PDF: 7 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200I (5 December 2005); doi: 10.1117/12.635893
Show Author Affiliations
Xingyan Wang, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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