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Proceedings Paper

A study on the optimal structures of high-power superluminescent diode
Author(s): Jing Zhang; Yuesu Zhang; Hui Li; Yi Qu; Xin Gao; Baoxue Bo
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Paper Abstract

This paper presents the structure design and fabrication technology of 850nm superluminescent Diodes (SLDs).Various ways have been tried for the suppression of F-P lasing oscillation to realize superluminescence: Tilted-stripe structure, tandem-type structure and non-injection section near the rear facet are introduced. Three structures are also compared and combined with each other. The device not lasing at maximum injection current 200mA is realized. At injection current of 150mA, the maximum output power can be 7.8mW and the device can still work at 100°C.

Paper Details

Date Published: 5 December 2005
PDF: 6 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202V (5 December 2005); doi: 10.1117/12.635763
Show Author Affiliations
Jing Zhang, Changchun Univ. of Science and Technology (China)
Yuesu Zhang, Changchun Univ. of Science and Technology (China)
Hui Li, Changchun Univ. of Science and Technology (China)
Yi Qu, Changchun Univ. of Science and Technology (China)
Xin Gao, Changchun Univ. of Science and Technology (China)
Baoxue Bo, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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