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Proceedings Paper

980-nm high power vertical external-cavity surface-emitting semiconductor lasers (VECSEL)
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Paper Abstract

We describe the design, fabrication, and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation, the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.

Paper Details

Date Published: 1 December 2005
PDF: 8 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602003 (1 December 2005); doi: 10.1117/12.635713
Show Author Affiliations
Guo-guang Lu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Chun-feng He, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Xiao-nan Shan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Te Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Yan-fang Sun, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Li Qin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chang-ling Yan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Changchun Univ. of Science and Technology (China)
Yong-qiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Li-jun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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