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Proceedings Paper

High-power InGaAs VCSEL's single devices and 2-D arrays
Author(s): Te Li; Yongqiang Ning; Yanfang Sun; Li Qin; Changling Yan; Yun Liu; Lijun Wang
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Paper Abstract

We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21W at room temperature, resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.

Paper Details

Date Published: 2 December 2005
PDF: 8 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602002 (2 December 2005); doi: 10.1117/12.635658
Show Author Affiliations
Te Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yanfang Sun, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Li Qin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Changling Yan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yun Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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