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Proceedings Paper

Photoluminescence properties of hydrogenated amorphous silicon nitride thin films deposited by helicon wave plasma chemical vapor deposition
Author(s): Guangsheng Fu; Wei Yu; Wanbing Lu; Haifeng Zhu; Li Zhang; Wenge Ding
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Paper Abstract

Hydrogenated amorphous silicon nitride (a-SiNx:H) thin films are deposited by helicon wave plasma chemical vapor deposition technique. The structural and photoluminescence properties of these films have been characterized by X-ray photoelectron spectroscopy (XPS), Photoluminescence (PL) and ultraviolet-visible (UV-VIS) spectroscopy. It is shown that the silicon atom bonds exist in the Si-Si and Si-N configurations and the amorphous silicon regions appear separately in the Si-rich a-SiNx films. All the PL spectra of the deposited films manifest itself as several interference peaks superposed on an energy-dependent Gaussian distributed band. The PL and absorption results of the deposited films with different nitrogen content support that the luminescence of the Si-rich a-SiNx:H films is related to the photo-excited carriers radiation process in the separated amorphous silicon potential well region, while the blue shift of PL main peaks and the enlargement of PL intensity with increase nitrogen content are ascribed to the size reduction of amorphous silicon separated regions and the enhancement of confinement effect.

Paper Details

Date Published: 6 December 2005
PDF: 5 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60203E (6 December 2005); doi: 10.1117/12.635356
Show Author Affiliations
Guangsheng Fu, Hebei Univ. (China)
Wei Yu, Hebei Univ. (China)
Wanbing Lu, Hebei Univ. (China)
Haifeng Zhu, Hebei Univ. (China)
Li Zhang, Hebei Univ. (China)
Wenge Ding, Hebei Univ. (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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