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Proceedings Paper

GaSb film growth on GaAs substrate by MBE
Author(s): Lin Li; Guo-jun Liu; Yong Wang; Mei Li
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Paper Abstract

The GaSb characteristics grown by molecular beam epitaxy (MBE) on GaAs substrates was reported. The abruptness of the interfaces, the degree of intermixing and the anion incorporation greatly affect the material quality. The RHEED patterns provide information on the surface structure and morphology of the sample and dictate surface reconstruction, accumulation and segregation. The structure parameters of samples are obtained from the rocking curve. The first and second satellite peaks appear around the main 0th-order peak. The experimental and simulated results of samples A and B with x-ray rocking curves show there is a GaAsSb layer because of As-for-Sb exchange at the GaSb/GaAs interface.

Paper Details

Date Published: 5 December 2005
PDF: 4 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602038 (5 December 2005); doi: 10.1117/12.635146
Show Author Affiliations
Lin Li, Changchun Univ. of Science and Technology (China)
Guo-jun Liu, Changchun Univ. of Science and Technology (China)
Yong Wang, Changchun Univ. of Science and Technology (China)
Mei Li, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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