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Proceedings Paper

Mask repair for the 65nm technology node
Author(s): Tod Robinson; Andrew Dinsdale; Ron Bozak; Roy White; David A Lee; Ken Roessler
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Paper Abstract

Photomask repair has been acknowledged as a value creation step in the mask process flow. As technology pushes forward, the need for more advanced mask repair is apparent. This paper introduces a new mask repair tool directed at the 65 nm node and extendable to the 45 nm node, the nm650de (digital extendible). The system provides high throughput, advanced imaging capabilities, tight control in X, Y, and minimal Z drift with very low noise. Results are shown for the repair of edge defects in tight lines and spaces on both Cr binary and MoSi (EPSM) masks. Statistical analysis is conducted with respect to edge placement, surface damage, and 193 nm AIMSTM, "transmission" (relative normalized peak intensity). This analysis is then compared to specifications for each technology node.

Paper Details

Date Published: 9 November 2005
PDF: 13 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924Z (9 November 2005); doi: 10.1117/12.634758
Show Author Affiliations
Tod Robinson, RAVE LLC (United States)
Andrew Dinsdale, RAVE LLC (United States)
Ron Bozak, RAVE LLC (United States)
Roy White, RAVE LLC (United States)
David A Lee, RAVE LLC (United States)
Ken Roessler, RAVE LLC (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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