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Proceedings Paper

Non-equilibrium electron dynamics phenomena in scaled sub-100 nanometer gate length GaAs metal semiconductor field effect transistors
Author(s): Jaeheon Han; Seungjin Yoo
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Paper Abstract

Ultrashort channel GaAs metal semiconductor field effect transistors were fabricated with gate lengths ranging from 30 nm to 1 05 nm, by electron beam lithography, in order to examine the scaling characteristics of transconductance. For gate lengths in sub-100 nanometer range, where gradual channel approximation is no longer valid, it was observed that the transconductance varies with a variety of small-dimension-related, nonequilibrium electron dynamics phenomena such as gate fringing effect, electron velocity overshoot, and short channel tunneling. Short channel tunneling was suggested experimentally for the first time to explain the degradation of transistor performance, overriding an enhancement due to electron velocity overshoot for a gate length smaller than the average inelastic mean free path of an electron.

Paper Details

Date Published: 8 June 2005
PDF: 7 pages
Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); doi: 10.1117/12.634541
Show Author Affiliations
Jaeheon Han, Kangnam Univ. (South Korea)
Seungjin Yoo, Yukyung Telecom Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5851:
Fundamental Problems of Optoelectronics and Microelectronics II
Yuri N. Kulchin; Oleg B. Vitrik; Vladimir I. Stroganov, Editor(s)

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