Share Email Print
cover

Proceedings Paper

Optical and structural properties of monocrystalline silicon wafers modified by compression plasma flow
Author(s): N. G. Galkin; E. A. Chusovitin; K. N. Galkin; V. M. Astashinskii; E. A. Kostyukevich; A. M. Kuzmitski; A. V. Gerasimenko
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Morphology, optical properties, crystal and electronic structure of monocrystal silicon after plasma processing, depending on initial voltage of magnetoplasma compressor (MPC), have been studied. It was shown that periodic surface structures are formed on silicon only in the short range ofinitial MPC voltages (2.8-3.2 kV), but at higher initial voltages (3.4-3.6 kV) the formation of "crater" and carrying out of the part of material on its periphery till the moment of crystallization is observed without the formation of surface structures. The decrease of the silicon lattice constant has been observed after plasma processing at all initial voltages that correlates with the decrease of band-gap energy by data of optical spectroscopy. Changes in crystal lattice and electronic structure of silicon modified by compression plasma flow have confirmed by red shift of 4.5 eV peak in reflectance spectra and decrease of its amplitude.

Paper Details

Date Published: 8 June 2005
PDF: 7 pages
Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); doi: 10.1117/12.634533
Show Author Affiliations
N. G. Galkin, Institute for Automation and Control Processes (Russia)
E. A. Chusovitin, Institute for Automation and Control Processes (Russia)
Far Eastern State Univ. (Russia)
K. N. Galkin, Institute for Automation and Control Processes (Russia)
Far Eastern State Univ. (Russia)
V. M. Astashinskii, Institute of Molecular and Atomic Physics (Belarus)
E. A. Kostyukevich, Institute of Molecular and Atomic Physics (Belarus)
A. M. Kuzmitski, Institute of Atomic and Molecular Physics (Belarus)
A. V. Gerasimenko, Institute of Chemistry (Russia)


Published in SPIE Proceedings Vol. 5851:
Fundamental Problems of Optoelectronics and Microelectronics II
Yuri N. Kulchin; Oleg B. Vitrik; Vladimir I. Stroganov, Editor(s)

© SPIE. Terms of Use
Back to Top