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Proceedings Paper

Photoluminescence properties of Er-doped Y2O3 thin films by radical-enhanced atomic layer deposition
Author(s): Trinh T. Van; John Bargar; Roman Ostroumov; Kang L. Wang; Jane P. Chang
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Paper Abstract

Erbium-doped Y2O3 thin films were synthesized by combining radical-enhanced atomic layer deposition (RE-ALD) of Y2O3 and Er2O3 in an alternating fashion at 350°C. The Er doping level was precisely controlled to range from 6 to 14 at.% by varying the ratio of Y2O3:Er2O3 cycles during deposition. At 350°C, the films were found to be polycrystalline, showing a preferential growth direction in the [111] direction. Room-temperature photoluminescence (PL) at 1.54 μm, characteristic of the Er3+ intra 4f transition, was observed in a 500-Å Er-doped (6 at.%) Y2O3 film, showing well resolved Stark features indicating the proper incorporation of Er in the Y2O3 host. Extended X-ray absorption fine structure (EXAFS) analysis revealed a six-fold coordination of Er by O in all samples, suggesting that the PL quenching observed at high Er concentration (>8 at.%) is likely dominated by Er ion-ion interaction and not by Er immiscibility in the Y2O3 host. The effective absorption cross section for Er3+ ions incorporated in Y2O3 was determined to be ~10-18 cm2, about three orders of magnitude larger than the direct optical absorption cross section reported for Er3+ ions in a stoichiometric SiO2 host.

Paper Details

Date Published: 22 November 2005
PDF: 5 pages
Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020H (22 November 2005); doi: 10.1117/12.634531
Show Author Affiliations
Trinh T. Van, Univ. of California, Los Angeles (United States)
John Bargar, Stanford Synchrotron Radiation Lab. (United States)
Roman Ostroumov, Univ. of California, Los Angeles (United States)
Kang L. Wang, Stanford Synchrotron Radiation Lab. (United States)
Jane P. Chang, Univ. of California, Los Angeles (United States)

Published in SPIE Proceedings Vol. 6002:
Nanofabrication: Technologies, Devices, and Applications II
Warren Y.-C. Lai; Leonidas E. Ocola; Stanley Pau, Editor(s)

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